TEL Epion's Ultra-Trimmer corrective etch system is designed to improve device performance and attain higher device yields by employing corrective etching to trim surface layers. TEL Epion's Location Specific Processing (LSP) software can precisely control the amount of material etched over a specific area of a wafer. In conjunction with Gas Cluster Ion-Beam (GCIB) etch technology, the Ultra Trimmer achieves excellent process control, precision, and repeatability. In production, corrective etching has demonstrated double-digit improvements in both frequency distribution and yield percentages. The Ultra Trimmer can be applied to many applications that require correction of surfaces or film non-uniformities.

• Surface or Bulk Acoustical Wave (SAW or BAW) filters to trim center frequency
• SOI to improve silicon thickness uniformity

• Corrects surface and thickness non uniformities across a wafer and wafer-to-wafer
• Control maps can be generated from a variety of metrology systems and formats including film thickness, surface topography, device frequency, etc.
• Uniformity Correction: up to 10X total variation reduction (dependant on starting non-uniformity)
• Location Specific Processing (LSP) software can be interfaced through a network to a metrology database and automatically generate correction maps
• Inert sputtering or chemical etching by using (Ar) or (NF3) process gas
• The substrate is mechanically scanned across the beam at up to 25cm/sec and is controlled in 1mm steps