TOKYO, March 31, 2008 - Tokyo Electron (TEL) today announced that they have begun receiving orders from production fabs throughout the world for the Trias HP Ti, the company's latest 300mm metal CVD system.



Based on TELs industry-proven Trias platform, the Trias HP Ti (High Performance Ti) is unique in its ability to deposit titanium (Ti) films over a wide temperature range, including temperatures that are significantly lower than those typically required by conventional Ti CVD reactors. This wide process window enables the Trias HP Ti to address the needs of todays most advanced semiconductor devices, as well as future generations of logic and memory devices with more restrictive thermal requirements.



The Trias HP Ti incorporates a proprietary showerhead gas dispersion system with optimized surface treatments to reduce particle-related film defects to the levels required for 32nm devices and beyond. Productivity improvements such as an optimized in-situ chamber cleaning process contribute to low-cost operation in a high-volume manufacturing environment. The system has also undergone extensive and rigorous testing at both the component and system level, and has demonstrated excellent reliability and process stability.



Kenji Washino, General Manager for TELs Single Wafer Deposition Business Unit, said, The unique low-temperature processing technology offered by TELs new metal CVD system will enable device makers to address the requirements for metal contacts at the 32nm node and beyond. The Trias HP Ti exemplifies TELs commitment to providing cost-effective manufacturing solutions to our customers most advanced process technology needs.